Giant magnetoresistance (GMR) read head with reactive-ion-etch defined read width and fabrication process

ABSTRACT

The GMR read head includes a GMR read sensor and a longitudinal bias (LB) stack in a read region, and the GMR read sensor, the LB stack and a first conductor layer in two overlay regions. In its fabrication process, the GMR read sensor, the LB stack and the first conductor layer are sequentially deposited on a bottom gap layer. A monolayer photoresist is deposited, exposed and developed in order to open a read trench region for the definition of a read width, and RIE is then applied to remove the first conductor layer in the read trench region. After liftoff of the monolayer photoresist, bilayer photoresists are deposited, exposed and developed in order to mask the read and overlay regions, and a second conductor layer is deposited in two unmasked side regions. As a result, side reading is eliminated and a read width is sharply defined by RE.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates generally to read head portions ofmagnetic heads for hard disk drives, and more particularly to read headshaving a reactive ion etch (RIE) defined read width.

[0003] 2. Description of the Prior Art

[0004] One well known way to improve the performance of hard disk drivesis to increase the areal data storage density of the magnetic hard disk.This can be accomplished by reducing a written data track width, suchthat more tracks per inch can be written on the disk. To read data froma disk with the reduced track width, it is also necessary to develop asufficiently narrow read head having a narrow read width, such thatunwanted magnetic field interference from adjacent data tracks issubstantially eliminated.

[0005] The standard prior art read head includes a plurality of thinfilms that are deposited and fabricated to produce a giantmagnetoresistance (GMR) read head, as is known to those skilled in theart. In a commonly used GMR read head, as shown in FIG. 3 and describedin detail herebelow, a GMR read sensor is located in a read region,while a longitudinal bias (LB) stack and a conductor are located in eachof two side regions. The GMR read sensor typically comprisesAl₂O₃/NiCrFe/NiFe seed layers, an antiferromagnetic PtMn transversepinning layer, a ferromagnetic CoFe keeper layer, a nonmagnetic Ruspacer layer, a ferromagnetic CoFe reference layer, a nonmagnetic CuOspacer layer, a ferromagnetic CoFe sense layer, and nonmagnetic Cu/Tacap layers. The LB stack used for hard-magnetic stabilization of the GMRread sensor typically comprises a nonmagnetic Cr film and ahard-magnetic CoPtCr film. Alternatively, the LB stack used forantiferromagnetic stabilization of the GMR sensor may typically comprisea ferromagnetic CoFe film and an antiferromagnetic Ir—Mn film. Theconductor typically comprises nonmagnetic Ta/Rh/Ta films.

[0006] In the typical fabrication process of the prior art GMR readhead, the GMR read sensor is deposited, and bilayer photoresists arethen applied and exposed to mask the GMR read sensor in a read regionfor defining a read sensor width. The unmasked GMR sensor in sideregions is removed by ion milling. The LB stack is then deposited at thesensor edges in the unmasked side regions, and the bilayer photoresistsare subsequently removed. Due to shadowing effects of the bilayerphotoresists it is difficult to achieve a designed read width, andsensor instability often results. This is because both the GMR readsensor and the LB stack are tapered and abutted with each other at thesensor edge, and due to the shadowing effects, the boundary between theread region and the side regions is ambiguous, so that the designed readwidth cannot easily be attained.

[0007] In the present invention, the read width is defined by RIE beforethe bilayer photoresist is applied. As a result, the read width isaccurately defined and improved device performance results.

SUMMARY OF THE INVENTION

[0008] The present invention is an improved magnetic head for a harddisk drive including a giant magnetoresistance (GMR) read head with areactive-ion-etch (RIE) defined read width, and its fabrication process.The GMR read head comprises a GMR read sensor and a longitudinal bias(LB) stack in a read region, and comprises the GMR read sensor, the LBstack and a first conductor in two overlay regions. In its fabricationprocess, the GMR read sensor, the LB stack and the first conductor aresequentially deposited on a bottom gap layer. A monolayer photoresist isapplied and developed in order to open a read region for the definitionof a read width, and RIE is then applied to remove the first conductorin the read region. After liftoff of the monolayer photoresist, bilayerphotoresists are applied and developed in order to mask the read andoverlay regions, and a second conductor is deposited in two unmaskedside regions. The GMR read sensor in the read region is active since itssense-layer magnetization is oriented in a longitudinal direction bythree counter-balancing fields, and can be rotated in responses tosignal fields. The GMR read sensor in the two overlay regions isinactive since its sense-layer magnetization is oriented in a transversedirection by a high current-induced field, and cannot be rotated inresponses to signal fields. As a result, side reading is eliminated anda read width is sharply defined by the boundaries between the read andoverlay regions.

[0009] It is an advantage of the magnetic head of the present inventionthat a read head has been developed with reduced side reading problems.

[0010] It is another advantage of the magnetic head of the presentinvention that a read head has been developed having a read width thatis defined by a reactive ion etch (RIE).

[0011] It is an advantage of the hard disk drive of the presentinvention that it includes a magnetic head having a reduced read trackwidth with reduced side reading problems.

[0012] It is another advantage of the hard disk drive of the presentinvention that it includes a magnetic head having a read width that isdefined by a reactive ion etch (RIE).

[0013] These and other features and advantages of the present inventionwill no doubt become apparent to those skilled in the art upon readingthe following detailed description which makes reference to the severalfigures of the drawings.

IN THE DRAWINGS

[0014]FIG. 1 is a top plan view depicting a hard disk drive having amagnetic head of the present invention;

[0015]FIGS. 2 and 3 are side cross-sectional views of a prior art readhead portion of a magnetic head;

[0016] FIGS. 4-7 are side cross-sectional views of a first preferredembodiment of a read head portion of a magnetic head of the presentinvention; and

[0017] FIGS. 8-11 are side cross-sectional views of a second preferredembodiment of a read head portion of a magnetic head of the presentinvention;

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018]FIG. 1 is a top plan view that depicts significant components of ahard disk drive which includes the magnetic head of the presentinvention. The hard disk drive 10 includes a magnetic hard disk 12 thatis rotatably mounted upon a motorized spindle 14. An actuator arm 16 ispivotally mounted within the hard disk drive 10 with a magnetic head 20of the present invention disposed upon a distal end 22 of the actuatorarm 16. A typical hard disk drive 10 may include a plurality of disks 12that are rotatably mounted upon the spindle 14 and a plurality ofactuator arms 16 having a plurality of magnetic heads 20 mounted uponthe distal ends 22 of the plurality of the actuator arms 16. As is wellknown to those skilled in the art, when the hard disk drive 10 isoperated, the hard disk 12 rotates upon the spindle 14 and the magnetichead 20 acts as an air bearing slider that is adapted for flying abovethe surface of the rotating disk. The slider includes a substrate baseupon which various layers and structures that form the magnetic head arefabricated. Such heads are fabricated in large quantities upon a wafersubstrate and subsequently sliced into discrete magnetic heads 20.

[0019] One way to increase the areal data storage density of a hard disk12 is to narrow the track width of the data tracks written on the harddisk, such that more tracks per inch can be written on the disk. Towrite data in narrower tracks it is first necessary to develop the writehead components of magnetic heads 20 with a narrower written trackwidth. Correspondingly, it is also necessary to develop read headcomponents of such magnetic heads 20 having narrowed active read widths,such that side reading from adjacent data tracks is minimized.

[0020] In an extensively used prior art GMR read head, as shown in FIGS.2 and 3, a GMR read head 50 includes a GMR read sensor 54, comprising aplurality of films such asAl₂O₃(3)/NiCrFe(3)/NiFe(1)/PtMn(15)/CoFe(1.6)/Ru(0.8)/CoFe(1.8)/CuO(2.2)/CoFe(2)/Cu(0.6)/Ta(6)films (thickness in nm) in a read region 58, a longitudinal bias (LB)stack 64, comprising a plurality of films such as Cr(3)/CoPtCr(40) filmsdisposed in two side regions 72, and an electrical conductor 68comprising a plurality of films such as Ta(3)/Rh(80)/Ta(3) films, alsoin the two side regions 72. In a head fabrication process, a bottomshield layer (S₁) 80 is fabricated upon a wafer substrate. An insulatingbottom gap layer (G₁) 84 and the GMR read sensor 54 are sequentiallydeposited on the S₁ 80. The wafer is then annealed in a 10 kOe magneticfield perpendicular to an alignment mark for 5 hours at 265° C. As isdepicted in FIG. 2, bilayer photoresists 90 and 92 are then depositedand exposed in a photolithographic tool to mask the GMR read sensor 54in the read region 58 for defining a read sensor width, and subsequentlydeveloped in a solvent to form undercuts 96. The unmasked plurality offilms of the GMR sensor 54 in the two side regions 72 are removed by ionmilling until the bottom gap layer 84 is exposed. The LB stack 64 andthe conductor 68 are then sequentially deposited at sensor edges 100 inthe unmasked side regions 72. The bilayer photoresists 90 and 92 arethen lifted off. Subsequently, the GMR read sensor 54 is patterned fordefining a sensor height, connected with another conductor (not shown)covered by an insulating top gap layer (G₂) 104 and a top magneticshield layer (S₂) 108. After the completion of this read headfabrication process, the write head fabrication process starts as iswell known to those skilled in the art. After the completion of theread/write head fabrication process, the read/write head is lapped alongthe alignment mark until designed sensor height and throat height areattained.

[0021] To ensure good electrical and magnetic contacts of the GMR readsensor 54 with the LB stack 64 and the conductor 68, ion milling of theGMR read sensor 54 is typically applied by tilting an ion beam gun by10° from a normal line for the formation of two short sensor edges 100,and the depositions of the LB stack 64 and the conductor 68 areconducted by tilting an ion beam gun by 20° from the normal line forgood coverage over the sensor edges 100. The two short sensor edges 100are needed to prevent unwanted domain instability, while the goodcoverage is needed to ensure enough CoPtCr film thickness at the sensoredges 100 and to ensure a steady electrical flow without anelectrostatic discharge.

[0022] To ensure proper sensor operation, the magnetization of the CoFekeeper layer (M₃) of the GMR read sensor 54 must be rigidly pinnedthrough anti-ferromagnetic/ferromagnetic parallel exchange coupling toits adjacent PtMn transverse pinning layer in a transverse direction(into the page) perpendicular to and away from an air bearing surface(ABS), while the magnetization of the CoFe reference layer (M₂) of theGMR read sensor 54 must be also rigidly pinned through antiparallelexchange coupling across the Ru spacer layer of the GMR read sensor 54in another direction perpendicular to but towards the ABS (out of thepage).

[0023] As is known to those skilled in the art to ensure optimal biasingof GMR responses, the magnetization of the CoFe sense layer (M₁) of theGMR read sensor 54 must be oriented in a longitudinal direction (seearrow 120) parallel to the ABS. This orientation is achieved due to abalance of three magnetic fields, one a ferromagnetic coupling field(H_(F)) between the CoFe reference layer and the CoFe sense layer, one ademagnetizing field (H_(D)) and the other a current-induced field (H₁).

[0024] After rigidly pinning M₃ in the transverse directionperpendicular to and away from the ABS (into the page), rigidly pinningM₂ in the another direction perpendicular to but towards the ABS (out ofthe page), and orienting M₁ in the longitudinal direction 120 parallelto the ABS with an optimal sense current, the GMR read sensor exhibits aresistance of R_(//)+(1/2)ΔR_(G), where R_(//) is a resistance measuredwhen M₁ M₂ and M₃ are parallel to each other, and ΔR_(G) is the maximumgiant magnetoresistance (GMR) measured when M₁ is antiparallel to M₂.During sensor operation, M₁ rotates in response to signal fields whileM₂ and M₃ remain unchanged. This M₁ rotation causes a change in theresistance of the GMR read sensor by −ΔR_(G) sin θ₁−ΔR_(A) sin²θ₁, whereθ₁ is an M₁ rotation angle and ΔR_(A) is the maximum anisotropymagnetoresistance (AMR) of the sense layer. Both R_(//) and ΔR_(G) mustbe high enough to ensure high signal amplitudes, while ΔR_(A) must below enough to ensure signal linearity.

[0025] To attain stable GMR responses, the LB stack 64 located in thetwo side regions 72 must exhibit a magnetization (M₄) oriented in thelongitudinal direction 120 parallel to the ABS. The ratio of M₄ to M₁ ispreferably higher than one in order to produce a sufficiently highlongitudinal bias field in the sense layer. To suppress multidomainactivities at sensor edges 100, the Cr/CoPtCr films used forhard-magnetic (HM) stabilization must exhibit a high coercivity (H_(C)),while the CoFe/IrMn films used for antiferromagnetic (AFM) stabilizationmust exhibit a high unidirectional anisotropy field (H_(UA)).

[0026] Due to shadowing effects of the top photoresist 92 with overhangs124 and 128 formed during the depositions of the LB stack 64 and theconductor 68 respectively, it is difficult to achieve sensor stabilityand attain a designed read width. The sensor stability cannot be easilyachieved since a CoPtCr “taper” 136 is formed at the sensor edge 100 dueto shadowing effects, and this taper 136 is much thinner than the CoPtCrfilm in the unmasked side region 72. To attain a magnetic momentcomparable to M₁ at the sensor edge 100, the CoPtCr film in the unmaskedside regions 72 must be thick enough to exhibit a magnetic moment of ashigh as more than six times of M₁. Consequently, when the sensorstability is achieved, signal sensitivity and read efficiency aresubstantially decreased. The designed read width cannot be easilyattained since a boundary between the read and side regions cannot beunambiguously defined. Three approaches to defining this boundary, onephysically by the top photoresist width, one magnetically by the LBstack, and the other electrically by the conductor, lead to threedifferent read widths. The physical boundary definition typically usedfor process controls cannot be well correlated with the read width. Themagnetic boundary definition is most correlated with the read width, butis difficult to locate due to complicated magnetics at the contiguousjunction between the sensor edge 100 and the CoPtCr taper 136. Theelectrical boundary definition is closely correlated with the readwidth, but is difficult to locate due to non-uniform current shuntinginto a conductor “taper” 142 formed above the GMR read sensor due to theshadowing effects.

[0027] An alternative prior art LB stack may comprise CoFe(3)/IrMn(15)films. The read head fabrication process is basically identical to thatpreviously described, except that after the deposition of the insulatingtop gap layer 104, the wafer is annealed in a 200 Oe magnetic fieldparallel to the alignment mark for 1 hour at 240° C. The anneal causesthe IrMn film to pin the magnetization of its underlying CoFe film in adirection parallel to the alignment mark. To ensure good electrical andmagnetic contacts of the GMR read sensor 54 with the LB stack 64 and theconductor 68, ion milling of the GMR read sensor 54 is typically appliedby tilting an ion beam gun by 30° from a normal line for the formationof two long sensor edges 100, and the depositions of the LB stack 64 andthe conductor 68 are conducted by tilting an ion beam gun by 20° fromthe normal line for good coverage over the sensor edges. Long sensoredges are obtained, and they are needed to ensure strong exchangecoupling at a long enough interface between the sensor edges and theCoFe/IrMn films, while good coverage is needed to ensure enough CoFe andIrMn film thicknesses at the sensor edges, and to ensure a steadyelectrical flow without an electrostatic discharge.

[0028] Due to shadowing effects of the top photoresist 92 with overhangs124 and 128 formed during the depositions of the LB stack 64 and theconductor 68 respectively, it is also difficult to achieve sensorstability and attain a designed read width. In addition, due to theshadowing effects, the IrMn film at the contiguous junction may bethinner than its critical thickness (approximately 6 nm), so that H_(UA)becomes almost zero at the contiguous junction. Currently, these GMRread heads are being used for magnetic recording at approximately 20Gb/in². While they exhibit good read performance, concerns about thesensor stability and the read width definition still remain. Therefore,to perform magnetic recording at ever increasing recording densities,the shadowing effects caused by the use of top photoresist 92 must beminimized.

[0029] As depicted in FIGS. 4-7, and particularly FIG. 7, a firstembodiment of the GMR read head 200 of the present invention includes aGMR read sensor 204 and a LB stack 208 in a read region 212, outerportions 220 of the GMR read sensor, outer portions 224 of the LB stackand two spaced apart portions 262 of a first conductor layer 236disposed in two sideways displaced overlay regions 276, and alsoincludes a second conductor layer 280 disposed in two side regions 278.Particularly, the GMR read sensor 204 may includeAl₂O₃(3)/NiCrFe(3)/NiFe(1)/PtMn(15)/CoFe(1.6)/Ru(0.8)/CoFe(1.8)/CuO(2.2)/CoFe(2)/Cu(0.6)/Ru(2.4)films, the LB stack 208 may include CoFe(3)/IrMn(6)/Ru(3) layers, andthe first conductor layer 236 may be formed of a Ta(20) film. In thehead fabrication process, a bottom shield layer 80 is fabricated upon awafer substrate. An insulating bottom gap layer (G₁) 84, the GMR readsensor 204, the LB stack 208, and the first conductor layer 236 are allsequentially deposited on a wafer. After the depositions, the wafer isannealed in a magnetic field of 10 kOe perpendicular to the alignmentmark for 5 hours at 265° C., and then annealed again in a magnetic fieldof 200 Oe parallel to the alignment mark for 1 hour at 240° C. The twoanneals cause the PtMn films to pin the magnetizations of theCoFe/Ru/CoFe films in a direction perpendicular to the alignment mark,and cause the IrMn film to pin the magnetization of its underlying CoFefilm in a direction parallel to the alignment mark.

[0030] After these two anneals, as is depicted in FIG. 4, a monolayerphotoresist 260 is deposited and exposed in a photolithographic tool,and then developed in order to open a read trench region 212 for thedefinition of a read width. Reactive ion etch (RIE) is then performed toremove a central portion of the first conductor layer 236 in the readtrench region 212 to leave two spaced apart conductor portions 262.After liftoff of the monolayer photoresist 260, as shown in FIG. 5,bilayer photoresists 268 and 270 depicted in FIG. 6 are deposited andexposed in the photolithographic tool to mask the read and overlayregions, and the wafer is then developed in a solvent to form undercuts274. The multilayer films in the unmasked side region 278 are thenremoved by ion milling until the insulating bottom gap layer 84 isexposed, and a second conductor 280 which may include Ta(3)/Rh(80)/Ta(3)films is then deposited in the unmasked side regions 278. After thisdeposition, the bilayer photoresists 268 and 270 are lifted off and theread head fabrication process continues in well known steps to fabricatean insulating top gap layer 284 and a top magnetic shield layer 288, asis depicted in FIG. 7. After the completion of this read headfabrication process, the well known write head fabrication process iscommenced. After the completion of the read/write head fabricationprocess, the sensor height is defined by lapping along the alignmentmark.

[0031] Due to the use of the LB stack 208 in the read region 212, itbecomes easier to achieve sensor stability without decreasing signalsensitivity and read efficiency. That is, due to the use of themonolayer photoresist 260 and RIE, it becomes easier to attain adesigned read width 212 without concerns about side reading.Particularly, the RIE of the first conductor layer 236 creates the twospaced apart portions 262 of the first conductor layer 236, each havinga sharply defined opposing face 292 that serves to help define the readwidth 212 of the GMR read head 200. As is seen in FIG. 7, each face 292is RIEd to be generally perpendicular to the film surface 224. Thesensor stability can be easily achieved due to magnetostaticinteractions between M₁ and M₄, which form a flux closure after the GMRread head is RIEd for the definition of the sensor width 212. A highsignal sensitivity can be maintained because M₄ only needs to be 1.5times M₁ for sensor stability, instead of more than 6 times M₁ whenCr/CoPtCr films are used for the HM stabilization. A high readefficiency can be maintained because stray fields, which stem from theCoPtCr film used for the HM stabilization, do not exist at the sensoredges. As a result, stray-field induced sensor stiffness at the sensoredges is substantially reduced. The designed read width 212 can besubstantially unambiguously attained since three factors for definingthe boundary between the read and overlay regions, one physically by themonolayer photoresist width, one magnetically by the LB stack, and thethird electrically by the first conductor, all lead to a substantiallyidentical read width 212. Side reading is substantially eliminated sincethe GMR read sensor is only active in the read region 212.

[0032] The first conductor layers 236 overlying the GMR read sensor 220and the LB stack 224 in the overlay regions 276 play a significant rolein defining the boundary between the read and overlay regions. Thisfirst conductor layer 236 must be highly conductive and RIEable. ARIEable Ta film can be used as the first conductor layer, but it must bedeposited upon a suitable seed layer such as a Ru Cr, W or TN_(x) filmin order to exhibit a low-resistivity (40 μΩ-cm) α phase, instead of ahigh-resistivity (180 μΩ-cm) β phase. Alternatively, RIEable W and Mofilms (exhibiting resistivities of 15 and 17 μΩ-cm, respectively) canalso be used as the first conductor layer. The use of the firstconductor layer 262 in the overlay region 276 leads to substantialcurrent shunting. For example, based on experimental results, the GMRread sensor 204 and the LB stack 224 exhibit a sheet resistance of 16Ω/cm², while those in the Ta first conductor layer exhibit a sheetresistance of 10 Ω/cm². As a result, 52% of the sense current will beshunted into the first conductor layer 262. This shunted current inducesa magnetic field strong enough to align M₁ in the two overlay regions276 in a direction perpendicular to the ABS. The GMR read sensor in thetwo overlay regions 276 is thus inactive since M₁ cannot be rotated inresponse to signal fields. As a result, side reading is substantiallyeliminated and a read width is sharply defined by the boundary betweenthe read 212 and overlay 276 regions.

[0033] The GMR read sensor 204 with the LB stack 208 and the firstconductor layer 236 exhibits a GMR coefficient of as low as below 5%.However, when the first conductor layer 236 is completely removed in theread region 212 by RIE, the GMR read sensor with the LB stack 208 in theread region exhibits a GMR coefficient of as high as above 11%. Moreimportantly, the GMR read sensor with the LB stack in the read regionbecomes active since M₁ is oriented in a direction parallel to the ABSby three counter-balancing fields, and can be rotated in response tosignal fields. Hence, it is important to completely remove the firstconductor layer in the read to region 212 to ensure viable sensoroperation. It is significant that although the bilayer photoresists arealso used in this first GMR read head embodiment, they don't play anycrucial role in defining the read width. Basically, the bilayerphotoresist is just used for connecting the GMR read head with thesecond layer 280.

[0034] A second embodiment 300 of the present invention is depicted inFIGS. 8-11, and as is best seen in FIG. 11, it comprises a GMR readsensor 304 and a LB stack 308 in a read region 312, and the firstconductor layer 320, outer portions 328 of the GMR read sensor, andouter portions 332 of the LB stack in two sideways displaced overlayregions 336. Particularly as depicted in FIG. 8, a first magnetic shieldlayer (S₁) 80 is fabricated upon a wafer substrate and the lower portionof the insulating bottom gap layer (G₁) 84 and a first conductor layer358 comprising TaN_(X)(3)/Ta(20) films are sequentially deposited on theS₁ shield layer 80. A monolayer photoresist 360 is then applied anddeveloped in order to open a read region 312 for the definition of aread width. RIE is then performed to remove the first conductor layer inthe read region 312, and the monolayer photoresist 360 is then removed,as shown in FIG. 9. the upper portion of the insulating bottom gap layer364, formed of an Al₂O₃ film, is then applied and polished. A GMR readsensor 304, that may includeNiCrFe(3)/NiFe(1)/PtMn(15)/CoFe(1.6)/Ru(0.8)/CoFe(1.8)/CuO(2.2)/CoFe(2)/Cu(0.6)/Ru(2.4)films, and an LB stack 308 that may include CoFe(3)/IrMn(6)/Al₂O₃(3)films, are sequentially deposited. After the depositions, the wafer isannealed in a magnetic field of 10 kOe perpendicular to the alignmentmark for 5 hours at 265° C., and then annealed again in a magnetic fieldof 200 Oe parallel to the alignment mark for 1 hour at 240° C. The twoanneals cause the PtMn films to pin the magnetizations of theCoFe/Ru/CoFe films in a direction perpendicular to the alignment mark,and cause the IrMn film to pin the magnetization of its underlying CoFefilm to in a direction parallel to the alignment mark.

[0035] After these two anneals, bilayer photoresists 366 and 368 areapplied, as shown in FIG. 10, and exposed in a photolithographic tool tomask the read and overlay regions, and then developed in a solvent toform an undercut 372. The multilayer films in the unmasked side regionare removed by ion milling until the first conductor layer 358 isexposed, and a second conductor layer 376 that may includeTa(3)/Rh(80)/Ta(3) films is then deposited in the unmasked side regions.After this deposition, the bilayer photoresists are lifted off and theread head fabrication process continues as described above. After thecompletion of this read head fabrication process, the write headfabrication process starts. After the completion of the read/write headfabrication process, the sensor height is defined by lapping along thealignment mark. This second embodiment also possesses well defined readwidth and stability, and side writing is substantially eliminated.

[0036] While the present invention has been shown and described withregard to certain preferred embodiments, it will be understood thatthose skilled in the art will no doubt develop certain alterations andmodifications thereto which nevertheless include the true spirit andscope of the invention. It is therefore intended that the followingclaims cover all such alterations and modifications.

What we claim is:
 1. A magnetic head including a giant magnetoresistance(GMR) read head including a plurality of films, comprising: a GMR readsensor; a first electrical conductor layer including at least oneelectrically conducting film, said first electrical conductor layerbeing disposed proximate said GMR read sensor in electrical connectiontherewith; said first electrical conductor layer including an inner endface that is generally perpendicular to a film surface of the GMR readsensor.
 2. A magnetic head as described in claim 1 wherein said firstelectrical conductor layer is disposed above said GMR read sensor.
 3. Amagnetic head as described in claim 1 wherein said first electricalconductor layer is disposed below said GMR read sensor.
 4. A magnetichead as described in claim 2 wherein a longitudinal bias (LB) stackincluding a plurality of films is disposed above said GMR read sensor.5. A magnetic head as described in claim 3 wherein a longitudinal bias(LB) stack including a plurality of films is disposed above said GMRread sensor.
 6. A magnetic head including a GMR read head, comprising: abottom magnetic shield layer; a bottom electrically insulating layerbeing disposed upon said bottom magnetic shield layer; a GMR readsensor, including a plurality of films being disposed upon said bottominsulating layer; two first electrical conductor layers being disposedin a spaced apart relationship proximate said GMR read sensor, each ofsaid first electrical conductor layers having an inwardly disposed facethat is formed in a generally perpendicular orientation relative to afilm surface of the GMR read sensor; a longitudinal bias (LB) layerbeing disposed proximate said GMR read sensor; a second electricallyinsulating layer being disposed above said GMR read sensor; and a topmagnetic shield layer being disposed above said second insulating layer.7. A magnetic head as described in claim 6 wherein said first electricalconductor layers are disposed above said GMR read sensor.
 8. A magnetichead as described in claim 6 wherein said first electrical conductorlayers are disposed below said GMR read sensor.
 9. A magnetic head asdescribed in claim 7 wherein said longitudinal bias (LB) layer isdisposed above said GMR read sensor.
 10. A magnetic head as described inclaim 8 wherein said longitudinal bias (LB) layer is disposed below saidsensor layer.
 11. A hard disk drive including a magnetic head thatincludes a GMR read head, comprising: a bottom magnetic shield layer; abottom electrically insulating layer being disposed upon said bottommagnetic shield layer; a GMR read sensor, comprising a plurality offilms, being disposed upon said bottom insulating layer; two firstelectrical conductor layers being disposed in a spaced apartrelationship proximate said GMR read sensor, each of said firstelectrical conductor layers having an inwardly disposed face that isformed in a generally perpendicular orientation relative to a filmsurface of said GMR read sensor; a longitudinal bias (LB) layer beingdisposed proximate said GMR read sensor; a top electrically insulatinglayer being disposed above said GMR read sensor; and a top magneticshield layer being disposed above said top insulating layer.
 12. Amagnetic head as described in claim 11 wherein said first electricalconductor layers are disposed above said GMR read sensor.
 13. A magnetichead as described in claim 11 wherein said first electrical conductorlayers are disposed below said GMR read sensor.
 14. A magnetic head asdescribed in claim 12 wherein said longitudinal bias (LB) layer isdisposed above said GMR read sensor.
 15. A magnetic head as described inclaim 13 wherein said longitudinal bias (LB) layer is disposed belowsaid GMR read sensor.
 16. A method for fabricating a GMR read headportion of a magnetic head, comprising: fabricating a bottom magneticshield layer; fabricating a bottom electrically insulating layer uponsaid bottom magnetic shield layer; fabricating a GMR read sensorincluding a plurality of films; fabricating a first electrical conductorlayer on a surface plane of said GMR read sensor; fabricating monolayerphotoresist mask upon said first electrical conductor layer, saidetching mask including a read width trench formed therethrough;reactive-ion-etching said first electrical conductor layer through theread width trench to create two first electrical conductor layers;fabricating a second electrically insulating layer above said GMR readsensor layer; and fabricating a top magnetic shield layer upon saidsecond electrically insulating layer.
 17. A method for fabricating a GMRread head portion of a magnetic head, as described in claim 16, whereinsaid two first electrical conductor layers are formed with opposing endfaces that result from the reactive-ion-etching, wherein said end facesare generally perpendicular to a film surface of said GMR read sensor.18. A method for fabricating a read head portion of a magnetic head, asdescribed in claim 17, wherein the step of fabricating a GMR read sensorincluding a plurality films is performed before the steps of fabricatinga first conductor layer, and fabricating a monolayer photoresist mask,and reactive-ion-etching a read width.
 19. A method for fabricating aread head portion of a magnetic head, as described in claim 17, whereinthe step of fabricating a first electrical conductor layer, and the stepof fabricating monolayer photoresist mask, and the step ofreactive-ion-etching a read width within said first electrical conductorlayer are all performed prior to the step of fabricating a GMR readsensor comprising a plurality of films.
 20. A method for fabricating aread head portion of a magnetic head as described in claim 18, furtherincluding the step of fabricating a longitudinal bias (LB) layerproximate said GMR read sensor.
 21. A magnetic head including a readhead portion that is fabricated by a method comprising the steps of:fabricating a bottom magnetic shield layer; fabricating a bottomelectrically insulating layer upon said bottom magnetic shield layer;fabricating a GMR read sensor including a plurality of films;fabricating a first electrical conductor layer on the film surface ofsaid GMR read sensor; fabricating monolayer photoresist mask upon saidfirst electrical conductor layer, said mask including a read widthtrench formed therethrough; reactive-ion-etching a read width trenchwithin said first electrical conductor layer to create two firstelectrical conductor layers; fabricating a top electrically insulatinglayer above said GMR read sensor; and fabricating a top magnetic shieldlayer upon said top electrical insulation layer.
 22. A magnetic head, asdescribed in claim 21, wherein said two first electrical conductorlayers are formed with opposing end faces that result from thereactive-ion-etching, wherein said end faces are generally perpendicularto a film surface of said GMR read sensor.
 23. A magnetic head, asdescribed in claim 22, wherein the step of fabricating a GMR read sensorincluding said plurality of films is performed before the steps offabricating a first conductor layer, fabricating monolayer photoresistmask, and reactive-ion-etching a read width trench.
 24. A magnetic head,as described in claim 22, wherein the step of fabricating a firstelectrical conductor layer, and the step of fabricating an monolayerphotoresist mask, and the step of reactive-ion-etching a read widthtrench within said first electrical conductor layer are all performedprior to the step of fabricating a GMR read sensor.
 25. A magnetic headas described in claim 23, further including the step of fabricating alongitudinal bias (LB) layer proximate said GMR read sensor.